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ARF1110Q4
Features
- 9 - 12 GHz Amplifier
- 33 dBm Saturated Output Power at 10.5 GHz
- 45% PAE at 10.5 GHz
- 27 dB Power Gain at 10.5 GHz
- 8 V, 190 mA Quiescent Bias
- 4 mm × 4 mm QFN Package
Specifications
- Min. Frequency (GHz) 9
- Max. Frequency (GHz) 11
- Gain (dB) 25
- P1dB (dBm) 31
- Psat (dBm) 32
- Bias Voltage (V) -1/8
- Bias Current (mA) 190
- Package 4 x 4
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More information
ARF1110Q4 is a two watt amplifier in a 4×4 QFN package for X-band applications. With 2 W saturated output power and 45% power-added efficiency at 10.5 GHz, the device is ideal for pulsed or CW phased array applications, as well as telecommunications and test and measurement systems. The part is pre matched to 50 Ω and external bias circuitry is required for operation.
The device is ESD protected to simplify handling and assembly.
The part is RoHS* compliant and built with the latest manufacturing techniques to optimize for reliability and quality control.
Export from The Netherlands/EU, no licence.
Applications
- Radar
- Telecommunications
- Test and Measurement
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Questions & Additional Support
For more information on a specific product or requirement, please contact [email protected] or visit our contact page.
High Frequency Design Expertise
The Altum RF designers have many years of expertise in GaAs and GaN high frequency design. Successful track record on design and development of catalog products and custom MMIC from 1 GHz to beyond 100 GHz.
Full Service
Altum RF is a component supplier of catalog products or custom products. We take care of the full supply chain. Products are tested and qualified according to JEDEC standards.
Customer Focus
Everything we do at Altum RF is focused on supporting our customers. With dedicated applications engineers we will support our customers during the design-in phase. A global network of sales representatives is in place to be close to the customer.