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ARF1306C5
Features
- 2 - 18 GHz Distributed Amplifier
- 34 dBm Saturated Output Power
- 15 dB Small-Signal Gain
- 10 dB Power Gain
- 15 dB Typical Input Return Loss
- 15 dB Typical Output Return Loss
- 5 mm × 5 mm QFN Package
Specifications
- Min. Frequency (GHz) 2
- Max. Frequency (GHz) 18
- Gain (dB) 15
- Psat (dBm) 33
- Bias Voltage (V) 20
- Bias Current (mA) 450
- Package 5 x 5
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More information
ARF1306C5 is a GaN distributed amplifier housed in an air-cavity ceramic package and designed for high bandwidth applications. With greater than 2 watts of output power and 15 dB of linear gain, it is well suited for a wide variety of applications. The part is pre matched to 50 Ω and RF ports are ac coupled.
The part is RoHS* compliant and built with the latest manufacturing techniques to optimize for reliability and quality control.
Export from The Netherlands/EU, no licence.
Applications
- Test and Measurement
- Aerospace and Defence
- ISM
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Questions & Additional Support
For more information on a specific product or requirement, please contact [email protected] or visit our contact page.
High Frequency Design Expertise
The Altum RF designers have many years of expertise in GaAs and GaN high frequency design. Successful track record on design and development of catalog products and custom MMIC from 1 GHz to beyond 100 GHz.
Full Service
Altum RF is a component supplier of catalog products or custom products. We take care of the full supply chain. Products are tested and qualified according to JEDEC standards.
Customer Focus
Everything we do at Altum RF is focused on supporting our customers. With dedicated applications engineers we will support our customers during the design-in phase. A global network of sales representatives is in place to be close to the customer.
