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ARF1307C7
Features
- 1 - 20 GHz Distributed Amplifier
- 10 W Saturated Output Power
- 20% PAE
- 18 dB Small-Signal Gain
- 11.5 dB Power Gain
- 15 dB Typical Input Return Loss
- 12 dB Typical Output Return Loss
- 7 mm × 7 mm QFN Package
Specifications
- Min. Frequency (GHz) 1
- Max. Frequency (GHz) 20
- Gain (dB) 18
- P1dB (dBm) 35
- Psat (dBm) 40
- Bias Voltage (V) 28
- Bias Current (mA) 950
- Package 7 x 7
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More information
ARF1307C7 is a gallium nitride distributed power amplifier housed in an air-cavity surface-mount ceramic package and designed for high bandwidth applications. With 18 dB small-signal gain, 10 W output power and 11.5 dB power gain, it is well suited for a wide variety of applications. The part is internally matched to 50 Ω. RF ports are AC coupled.
The part is RoHS* compliant and built with the latest manufacturing techniques to optimize for reliability and quality control.
Export from The Netherlands/EU, dual-use, end-use statement required.
Applications
- Test and Measurement
- Aerospace and Defense
- ISM
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Questions & Additional Support
For more information on a specific product or requirement, please contact [email protected] or visit our contact page.
High Frequency Design Expertise
The Altum RF designers have many years of expertise in GaAs and GaN high frequency design. Successful track record on design and development of catalog products and custom MMIC from 1 GHz to beyond 100 GHz.
Full Service
Altum RF is a component supplier of catalog products or custom products. We take care of the full supply chain. Products are tested and qualified according to JEDEC standards.
Customer Focus
Everything we do at Altum RF is focused on supporting our customers. With dedicated applications engineers we will support our customers during the design-in phase. A global network of sales representatives is in place to be close to the customer.
