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ARF1007

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Features

  • 81 - 86 GHz Power Amplifier MMIC
  • 29.5 dBm Saturated Output Power
  • 25 dB Small-Signal Gain
  • 35.5 dBm Output IP3
  • 4.0 V, 1.0 A Nominal Quiescent Bias

Specifications

  • Min. Frequency (GHz) 81
  • Max. Frequency (GHz) 86
  • Gain (dB) 25
  • P1dB (dBm) 28
  • Psat (dBm) 29.5
  • PAE (%) 16
  • OIP3 (dBm) 35.5
  • Bias Voltage (V) 4
  • Bias Current (mA) 1000
  • Package Bare Die

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More information

ARF1007 is a highly linear gallium-arsenide E-band power amplifier designed for high bandwidth applications. With 0.9 watt saturated output power across the band and 25 dB of linear gain, it is well suited for high capacity radio systems. The part is pre matched to 50 Ω with an integrated, high dynamic range and temperature compensated power detector. The device is ESD protected to simplify handling and assembly. RF ports are ac coupled.

The part is RoHS* compliant and built with the latest manufacturing techniques to optimize for reliability and quality control.

Export from The Netherlands/EU, dual-use, end-use statement required.

Applications

  • Point-to-Point E-band Communications
  • Test and Measurement
  • ISM

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Questions & Additional Support

For more information on a specific product or requirement, please contact [email protected] or visit our contact page.

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High Frequency Design Expertise

The Altum RF designers have many years of expertise in GaAs and GaN high frequency design. Successful track record on design and development of catalog products and custom MMIC from 1 GHz to beyond 100 GHz.

Full Service

Altum RF is a component supplier of catalog products or custom products. We take care of the full supply chain. Products are tested and qualified according to JEDEC standards.

Customer Focus

Everything we do at Altum RF is focused on supporting our customers. With dedicated applications engineers we will support our customers during the design-in phase. A global network of sales representatives is in place to be close to the customer.