White Paper: Wideband, High-Power GaN PAs in SMT Packages Preserve Electrical and Thermal Performance While Simplifying Design

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Altum RF published a White Paper on Wideband, High-Power GaN PAs in SMT Packages in Microwave Journal

Abstract
This paper discusses gallium nitride as the preferred technology over gallium arsenide for facilitating power levels
up to 10 watts and providing superior performance with simpler handling and assembly requirements. Topics
include circuit design implications for these higher power levels, surface mount packaging for simplified design,
performance examples and applications.

available at Microwave Journal

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