Altum RF Announces Three New Amplifiers Covering Q, V, and E-Band, Using WIN Semiconductors’ Latest 0.1µm GaAs pHEMT Technology
Compact MMIC amplifiers achieve high gain, low noise, with ease of use for design-in
(EINDHOVEN, THE NETHERLANDS) April 5, 2022 – Altum RF, a supplier of high-performance RF to millimeter-wave semiconductor solutions for next generation markets and applications, announces three new GaAs pHEMT MMIC amplifiers targeting applications covering Q, V, and E-bands. Using WIN Semiconductors’ next-generation PP10-20 GaAs pHEMT technology, these compact die amplifiers achieve high gain and low noise, while simplifying design-in for engineers by using single gate and single drain supplies. Highlights of these amplifiers include:
- ARF1208 low noise amplifier – 37-59 GHz, 2.5 dB noise figure and 26.5 dB linear gain at 50 GHz
- ARF1207 linear amplifier – 57-71 GHz, 25 dB gain and 22 dBm P1dB output power
- ARF1206 low noise amplifier – 71-86 GHz, 22 dB gain and 4 dB noise figure
WIN’s PP10-20 technology builds on the proven and mature PP10-10 platform and targets applications up to 170 GHz. As a key differentiator, PP10-20 allows for a substantial increase in gain, with the same operating voltage for power applications.
“Building on our experience with WIN’s proven 0.1 µm technology and with careful attention to modeling, design and simulation workflow, we achieved first-pass success with a family of millimeter-wave products in the newly-released PP10-20 process,” stated Greg Baker, Altum RF CEO. “We are pleased with this success, which supports our strategy to develop leading-edge components for millimeter-wave applications, and we look forward to building a broader portfolio of products to address today’s and future market requirements.”
David Danzilio, Senior Vice President, Technology and Strategic Business Development at WIN Semiconductors added, “We are pleased to partner with Altum RF to commercialize leading-edge millimeter-wave products leveraging WIN’s high-performance platforms. This next generation PP10-20 technology builds upon the mature PP10-10 platform used in many of today’s E-band power amplifiers deployed in wireless backhaul. PP10-20 is a versatile technology enabling a wide range of millimeter-wave front-end functions and supports amplifier performance well into D-band. The first-pass success achieved by Altum RF confirms the reproducibility and production readiness of the PP10-20 platform.”
Altum RF is an international company, with strategic partnerships and office locations that span the globe to support its growing product portfolio and permits a variety of design projects based on customer requirements.
ABOUT ALTUM RF
Established by leading experts in the RF/microwave industry, Altum RF designs high-performance RF to millimeter-wave solutions for next generation markets and applications. We work closely with our customers and partners to ensure superior technical support and customer service. With the help of our exceptional global partners, we can significantly shorten product development cycles by managing the entire supply chain from design to packaging, testing and qualification.
Altum RF develops a broad range of products for commercial and industrial applications, with strategic roadmaps to rapidly expand our product portfolio. Our engineers use decades of modeling expertise and system applications knowledge to define the right products for the most challenging requirements. Using proven technologies like GaAs or GaN, we are able to deliver optimal products in terms of RF performance, level of integration and cost. Whether your project is for Telecom, 5G, Satcom, Test & Measurement, Aerospace & Defense or Industrial, Scientific and Medical (ISM) applications, discover Altum RF as your next RF semiconductor partner.
WIN SEMICONDUCTORS CORP.
WIN Semiconductors Corp. is the leading global provider of pure-play GaAs and GaN wafer foundry services for the wireless, infrastructure and networking markets. WIN provides its foundry partners a diverse portfolio of Hetero-junction Bipolar Transistor and Pseudomorphic High Electron Mobility Transistor, Gallium Nitride High Electron Mobility Transistor, PIN Diode and Optical Device technology solutions that support leading edge products for applications from 50 MHz to 170 GHz and through light-wave. Custom products built by WIN Semiconductors Corp. are found in a vast array of markets, including smartphone, mobile infrastructure, 3-D sensing, optical communications, CATV, aerospace, defense and automotive applications.
For over 20 years, WIN has provided foundry services from its state of the art, ISO9001/14001 certified 150mm GaAs facility headquartered in Taoyuan City, Taiwan. This multi-site manufacturing facility has approximately 3000 employees and provides WIN customers with a diverse array of device technology platforms and value-added services, including DC/RF product testing, Cu wafer bumping and advanced package solutions for accelerated product development.