ARF1001C7

The ARF1001C7 is a two stage GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier in an air-cavity surface-mount ceramic package and designed for a variety of X-band applications. The operating frequency ranges from 8 to 11 GHz. The saturated pulsed output power is 37 dBm and the small signal gain is 25 dB. The part is internally matched to 50 Ω. The part can be auto-biased using a –5 V reference voltage, or direct-biased for variable bias control. RF ports are AC coupled.

The part is RoHS* compliant and built with the latest manufacturing techniques to optimize for reliability and quality control.

Export from The Netherlands/EU, dual-use, end-use statement required.

SKU: ARF1001 Category:

Description

  • Test and Measurement Equipment
  • Radar
  • Satellite Communication
  • Wireless Network Data Communication

Min. Frequency (GHz): 8

Max. Frequency (GHz): 11

Gain (dB): 25

P1dB (dBm): 36

Psat (dBm): 38

Bias Voltage (V): -5/8

Bias Current (mA): 1450

Package: 7 x 7 Ceramic

  • 8 – 11 GHz Power Amplifier
  • 5 W Saturated Output Power
  • 40 % PAE
  • 25 dB Small-Signal Gain
  • 20 dB Power Gain
  • > 10 dB Input and Output Return Loss
  • 8 V, 1.45 A Nominal Bias (pulsed)
  • 7 mm × 7 mm QFN Package