ARF1014

ARF1014 is a monolithic 27 to 31.5 GHz power amplifier die fabricated in a GaN-on-SiC process technology. It achieves 12 W saturated output power with 21% PAE. With 5 W linear power (IMD < -22 dBc) and 19 dB of associated linear power gain it is well suited for satcom terminals and other Ka-band applications. Input and output ports are internally matched to 50 Ω. ARF1014 is 100% on-wafer DC and RF tested.

The part is RoHS* compliant and built with the latest manufacturing techniques to optimize for reliability and quality control.
Export from the Netherlands/EU, dual-use, end-use statement required.

Category:

Description

  • Satcom
  • Telecommunications
  • Instrumentation

Min. Frequency (GHz): 27

Max. Frequency (GHz): 31.5

Gain (dB): 25

Psat (dBm): 41

OIP3 (dBm): 49

Bias Voltage (V): -1.9/22

Bias Current (mA): 280

Package: Bare Die

• 27—31.5 GHz GaN Power Amplifier MMIC
• 12 W Saturated Output Power
• 21% PAE
• 25 dB Small-Signal Gain
• >10 dB Input and Output Return Loss
• 37 dBm Linear Output Power with IMD < -22 dBc
• 19 dB Linear Power Gain
• Die Size: 3.00 × 3.40 × 0.10 mm